Active Power Cycling Test Bench for SiC Power MOSFETs—Principles, Design, and Implementation
نویسندگان
چکیده
One way to achieve the best in class reliability is implementation of a design for methodology into process order estimate lifetime each individual critical component, based on proper models failure modes. The main drawback above-mentioned approach that it relies handbook-based models, which usually are only accurate particular components. This fact causes necessity develop testing procedure SiC power metal-oxide semiconductor field-effect transistor (MOSFET), determine its model parameters. Such could be further implemented high-performance supply process. In this article, cost effective and industrial friendly laboratory setup active cycling MOSFETs SOT-227b housing presented. By example, various control strategies accelerated testing, degradation indicators wear-out condition monitoring junction temperature estimation methods compared their impact test results complexity either maintenance procedure. Technical issues related start-up detection algorithm discussed. Finally, subjected over 63355 cycles
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ژورنال
عنوان ژورنال: IEEE Transactions on Power Electronics
سال: 2021
ISSN: ['1941-0107', '0885-8993']
DOI: https://doi.org/10.1109/tpel.2020.3018535